Nano Electronics & Photonics

Symposium Chair
Luigi Colombo Fellow, External Research Development Group Texas Instruments Incorporated Bob Doering Senior Fellow and Research Manager Texas Instruments	Leonard Frank Register Associate Professor, Electrical and Computer Engineering University of Texas at Austin
Confirmed Invited Speakers
Phase Transition Oxide Electronics Shriram Ramanathan Associate Professor, Harvard University	Impact of Nanoscale Dimensions on Optical Properties Alain C. Diebold Professor, University of Albany
Graphene Nanoelectronics Sanjay K. Banerjee Professor, The University of Texas at Austin	Logic and communications technologies beyond conventional Si CMOS Supratik Guha Director Physical Sciences Department, IBM Thomas J. Watson Research Center
Nanoelectronics Research Initiative: A Public-Private Partnership Supporting Collaboration Celia Merzbacher Vice President for Innovative Partnerships, Semiconductor Research Corporation

Symposium Sessions
	Tuesday June 14
8:30	Opening TechConnect World Keynotes - Innovation Impact - Nanotech, Cleantech, Microtech, Biotech 2011
1:30	Welcome to Nanotech Germany
3:15	Harvard and MIT Technology Showcase
4:00	Italian Trade Commission Reception - Nanotech booth 1607, Cleantech booth 707
4:15	MEMS Networking Reception - Sponsored by NSTI & MEMS Industry Group
4:00	Innovation Showcase & Poster Session - Reception (4:00 - 6:00)
	Wednesday June 15
8:30	Nanoelectronics for 2020 and Beyond - NNI Signature Initiative Special Session
8:30	Canada Innovates! - Canadian Breakthroughs in Cleantech
10:30	NanoFab: Novel Fabrication & Metrology Techniques 1
10:30	Canada Innovates! - Canadian Breakthroughs in Nanotech
1:30	Power Electronics Innovation Spotlights
2:00	Fraunhofer presents: The German High Tech Champions Award 2011 - in Photovoltaics
3:00	TechConnect IP Partnering: Semiconductors, Sensors & Microsystems
1:30	US-China Nanotech Connect
3:30	US-China Nanotech Connect - Networking Reception - Booth 930 Expo Hall C (3:30 - 4:00)
4:00	Piemonte Agency For Investments, Export And Tourism Reception - Nanotech booth 1607, Cleantech booth 707
4:00	Innovation Showcase & Poster Session - Reception (4:00 - 6:00)
	Nano Electronics & Photonics
	Thursday June 16
8:30	Nanoelectronics Technologies & Applications 1
10:30	Device Design and Simulation 1
10:30	Nanoelectronics Technologies & Applications 2
1:30	Device Design and Simulation 2
2:30	TechConnect Ventures: Semiconductors, Sensors & Microsystems
Symposium Program
	Tuesday June 14
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8:30	Opening TechConnect World Keynotes - Innovation Impact - Nanotech, Cleantech, Microtech, Biotech 2011	Ball Room A
	Session chair: Matthew Laudon, NSTI/CTSI, US
8:30	Welcome and Opening M. Laudon, TechConnect World Co-Chair, US
8:40	Cross Sector Perspective on Nanotech to Cleantech Innovation T. Earles, Lockheed Martin & Former OSTP, US
9:10	No Small Matter: Scaling the Business of Materials Science T. Taber, CTO, Eastman Kodak Company, US
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1:30	Welcome to Nanotech Germany	Room 205
1:30	Opening and Welcome F. Wolf, Federal Ministry of Education and Research (BMBF), Bonn, DE
1:40	CNT – A novel cooperation model to conquer new markets for CNT based products P. Krüger, Inno.CNT, DE
2:00	Zentallium®, ZoLiBat® & H2Tank2Go®-modules and ZE-powerplant-nanostructures for zero-emission future transportation and energy D. Zoz, Zoz Group, DE
2:20	Carbon Nanotubes and Nano Structures for Applicati on in Interconnects,Sensors and Wafer Level Packaging S. Schulz, Fraunhofer Institute for Electronic Nano Systems, Chemnitz, DE
2:40	NanoMat: The German Network for Nanomaterials and Polymer Phase Lithography:Layout-Controlled and Spontaneous Structure Formation on the Nano Scale T. Heiler, R. Hedderich, R. Gröger, S. Walheim, T. Schimmel, Karlsruhe Institute of Technology, NanoMat, DE
3:00	Sharing the enthusiasm for Nano B. Gerbauer, Nanosystems Initiative Munich (NIM), DE
3:20	CANdots: Nanoparticles for your Purpose J. Niehaus, D. Tiegs, S. Becker, V-H. Tran, H. Weller, Center for Applied Nanotechnology (CAN) GmbH, DE
3:40	Hi-Tec Nano-Composites Containing Carbon Nanotubes W. Schütz, FutureCarbon GmbH, DE
4:00	Electron Beam Lithography: The Nanolithography for Nanotechnology J. Krostoff and I. Stolberg, Vistec Electron Beam Lithography Group, US
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3:15	Harvard and MIT Technology Showcase	Room 306
	Session chair: Chris Noble, Massachusetts Institute of Technology
3:15	Introduction C. Noble, MIT, US
3:20	Key Semiconductor Advances in Electronics and Optoelectronics (invited presentation) G. Fitzgerald, MIT, US
3:35	New versatile nano/microstructured surfaces: Applications in anti-icing, prevention of biofouling and self-cleaning oleophobic materials (invited presentation) J. Aizenberg, Harvard University, US
3:50	Nanoengineered Surfaces for Efficiency Enhancements in Energy and Water (invited presentation) K. Varanasi, MIT, US
4:05	Filtration System for Small-Medium Scale Wastewater and Water Treatment (invited presentation) C. Vectis, Harvard University, US
4:20	Smartphone control of Unmanned Aerial Vehicles (UAVs) (invited presentation) M. Cummings, MIT, US
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4:00	Italian Trade Commission Reception - Nanotech booth 1607, Cleantech booth 707	Expo Hall
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4:15	MEMS Networking Reception - Sponsored by NSTI & MEMS Industry Group	Room 209
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4:00	Innovation Showcase & Poster Session - Reception (4:00 - 6:00)	Expo Hall
	Wednesday June 15
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8:30	Nanoelectronics for 2020 and Beyond - NNI Signature Initiative Special Session	Room 208
	Session chair: Bob Doering, Texas Instruments, US
8:30	Nanoelectronics Research Initiative: A Public-Private Partnership Supporting Collaboration (invited presentation) C. Merzbacher, Semiconductor Research Corporation, US
8:55	Exploiting the Intrinsic Nature of Small Scales (invited presentation) J. Rogers, DARPA, US
9:20	Graphene Nanoelectronics (invited presentation) S.K. Banerjee, L.F. Register, E. Tutuc, D. Akinwande, L. Colombo and G. Carpenter, University of Texas at Austin, US
9:45	Logic and communications technologies beyond conventional Si CMOS (invited presentation) S. Guha, IBM T.J. Watson Research Center, US
11:15	Shared Topic Presentation - Room 206 at 11:15, Next Generation Electronic Products C. Jean, Teledyne Dalsa Semiconductor, CA
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8:30	Canada Innovates! - Canadian Breakthroughs in Cleantech	Room 206
8:30	Welcome to Canadian Innovation C. Denter, Technology Partnering Officer, Consulate General of Canada to New England, CA
8:40	Opening Remarks P. Binns, Consul General, Consulate General of Canada to New England, CA
9:00	Canadian Energy RD&D and Clean Technology Developments P. St-Jean, Natural Resources Canada, Energy Technology Policy, CA
9:15	Canada-US CleanTech collaboration Opportunities G. Murphy, Director, Natural Resources Canada, CA
9:30	On the Rise – Conversion Efficiency in Organic Photovoltaics Y. Tao, National Research Council (NRC), CA
9:45	Utilizing Renewable Energy Resources for Distributed Power K. Kassam, Ballard Power, CA
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10:30	NanoFab: Novel Fabrication & Metrology Techniques 1	Room 203
	Session chair: Jason Haaheim, NanoInk, US
10:30	Photonic Sintering of Silver for Roll-to Roll-Printed Electronics S. Ahmed, Xenon Corporation, US
10:50	Development of Methanol Based Reactive Ion Etching Processes for Nanoscale Magnetic Devices M.T. Moneck, J.-G. Zhu, Carnegie Mellon University, US
11:10	Patterning Technology for Nanomanufacturing H.I. Smith, M. Walsh, F. Zhang, G. Hourihan, J. Ferrera, M. Jaspan, LumArray, US
11:30	Picosun SUNALE™ ALD process tools for nanoscale coatings – seamless transition from R&D to industrial production M. Toivola, P.J. Soininen, T. Lehto, T. Pilvi, Picosun Oy, FI
11:50	Fabrication and Recording of Bit Patterned Media Prepared by Rotary Stage Electron Beam Lithography M.T. Moneck, W. Lin, S. Powell, T. Okada, J. Fujimori, T. Kasuya, M. Katsumura, T. Iida, K. Kuriyama, J. Bain, J.-G. Zhu, Carnegie Mellon University, US
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10:30	Canada Innovates! - Canadian Breakthroughs in Nanotech	Room 206
10:30	Breadth of Nano Research in Canada M. D'Iorio, Director General, National Institute for Nanotechnology, CA
10:45	Nanotechnology Research Landscape in Canadian Universities F. Gu, University of Waterloo, CA
11:00	Towards Industrialization of Single-Walled Carbon Nanotubes B. Simard, NRC Steacie Institute for Molecular Sciences, CA
11:15	Next Generation Electronic Products C. Jean, Executive VP & General Manager, Teledyne Dalsa Semiconductor, CA
11:30	Scientific Research and Experimental Development (SR&ED)How to help fund your Research in Canada M. Machado, Pricewaterhouse Coopers, US
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1:30	Power Electronics Innovation Spotlights	Room 310
	Session chair: Andrew Ray, Bingham McCutchen LLP, US
1:30	Low Weight, Low Cost Commercial-Scale PV Inverter P. Bundschuh, Ideal Power Converters, US
1:45	Silicon Carbide Power Devices in Renewable Energy Applications R. Singh, GeneSiC Semiconductor Inc., US
2:00	Distributed Energy Optimization for Photovoltaic Systems with a Module-Integrated Balancing Converter J. Stauth, Solar Semiconductor, Inc., US
2:15	New Capacitor Materials for Power Electronics G. Welsch, Case Western Reserve University, US
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2:00	Fraunhofer presents: The German High Tech Champions Award 2011 - in Photovoltaics	Room 309
2:00	PV Technology from Basic Science to Application R. Schindler, Fraunhofer Center for Sustainable Energy Systems, US
2:20	Business Case Ion Layer Gas Reaction R. S. Araoz, H. Zentrum, Helmholtz-Zentrum Berlin, DE
2:40	Business Case Protective PV Module Coating U. Lommatzsch, Fraunhofer Institute for Manufacturing Technology and Advanced Materials, DE
3:00	Business Case Time Resolved Photoluminescence Imaging D. Kiliani, University of Konstanz, DE
3:20	Business Case Direct Laser Interference Patterning A. Lasagni, Fraunhofer Institute for Material and Beam Technology, DE
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3:00	TechConnect IP Partnering: Semiconductors, Sensors & Microsystems	Room 305
	Session chair: Ryan Williams, Fraunhofer, US
3:00	High-speed feedback controller P. Lamoureux, Valeo Management, CA
3:10	Organic/Inorganic Hybrid Optical Amplifier with Wavelength Conversion L. Loerchner, University of Waterloo, CA
3:20	Inertial Sensors Based on Magnetic Levitation F. Barrot, CSEM SA, CH
3:30	Low cost production of single crystal-like films S. Lux, ETH Zurich - ETH transfer, CH
3:40	Tunable High Sensitivity or Low Cost Gas Detectors D. Nugent, University of Minnesota, US
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1:30	US-China Nanotech Connect	Expo Hall Theater
1:30	Introducing Suzhou Industry Park- a Vibrant and Progressive High-tech Hub in China D. Zhang, Technology and Development Bureau, Suzhou Industrial Park (SIP), CN
1:45	Overview of Suzhou Nano-manufacturing Capabilities L. Liu, NanoGlobe, CN
2:00	Printed electronics R&D in China and collaboration opportunities Z. Cui, Suzhou Institute of Nanotech and Nanobionics (SINANO), CN
2:15	Intradermal Drug Delivery Devices Based on Proprietary Functional Micro Array (FMA) Technology B. Xu, Suzhou Natong Bionanotechnology Ltd. (Nanomed), CN
2:30	Experience Sharing: Growing Venture Businesses in China N. An, New England Chinese Information and Networking Association, CN
2:45	Technology Partnership and Business Development Opportunities in Nanopolis Suzhou Q&A L. Liu, NanoGlobe, CN
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3:30	US-China Nanotech Connect - Networking Reception - Booth 930 Expo Hall C (3:30 - 4:00)	Expo Hall Theater
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4:00	Piemonte Agency For Investments, Export And Tourism Reception - Nanotech booth 1607, Cleantech booth 707	Expo Hall
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4:00	Innovation Showcase & Poster Session - Reception (4:00 - 6:00)	Expo Hall
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	Nano Electronics & Photonics	Expo Hall
-	Effect of Thickness based on self-assembly of block copolymer S.W. Lee, N.R. Park, S.Y. Kim, D.M. Shin, HongKong University, KR
-	Novel Plasmon Coupled Nanophotonic Devices and Sensors Based on Encapsulated 2-D Silver Nanoparticle arrays Y. Tzeng, C-Y Liu, H.C. Chui, C. Huang, C-H Tu, G.W.L. Chen, S. Chen, K-C Liang, Y. Chu, National Cheng Kung University, TW
-	Photoalingnment using Reactive Monomers added Photodecomposition Polyimide H.J. Kim, D.M. Shin, Hongik Univercity, KR
-	Comprehensive Study on Reflectance of Si3N4 Subwavelength Structures for Silicon Solar Cell Applications Using 3D Finite Element Analysis Z-L Lu, National Chiao Tung University, TW
-	Underlap Channel Nanoscale Dopant Segregated Schottky Barrier SOI MOSFET for Low Power Mixed Signal Circuits G.C. Patil, S. Qureshi, Indian Institute of Technology Kanpur, IN
-	Variability Study for Silicon Nanowire FETs Y.-B. Liao, M.-H. Chiang, K. Kim, W.-C. Hsu, National Cheng Kung University, TW
-	Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-/Metal Gate Bulk FinFETs H-W Cheng, Y-Y Chiu, Y. Li, National Chiao Tung University, TW
-	Biomolecular, Organic and Inorganic Processing Fabrics: Design and Synthesis of Processing Cells and Primitives S.E. Lyshevski, Rochester Institute of Technology, US
-	C-V Data and Geometry Parameters of Self-Assembled INAS/GAAS Quantum Rings I. Filikhin, V.M. Suslov, B. Vlahovic, North Carolina Central University, US
-	Single Molecule Quantum-Effect Electronic Devices S.E. Lyshevski, Rochester Institute of Technology, US
-	Annealing effects on electrical and optical properties of S.M. Faraz, NED University of Engineering & Technology, PK
-	Characteristics of co-doped device with hole and electron transport material N.R. Park, G.Y. Ryu, D.H. Lim, S.J. Lee, Y.K. Kim, D.M. Shin, Hong-ik University, KR
-	Photon-Induced Biomolecular Sensing and Processing: Towards Engineering, Science and Medical Applications S.E. Lyshevski, Rochester Institute of Technology, US
-	Nanoporous thin-film waveguide resonance sensors with wavelength interrogation over a broad bandwidth Z-M Qi, Z. Zhang, Q. Liu, D. Lu, Institute of Electronics, Chinese Academy of Sciences, CN
-	VerilogA modeling and simulation of Memristor for circuit application D. Xia, L. He, San Jose State University, US
-	Self-assembled monolayer (SAMs) and electroplating process for Cu filling on 32-nm trench M. Hong, Hanyang university, KR
	Thursday June 16
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8:30	Nanoelectronics Technologies & Applications 1	Room 207
	Session chair: Frank Register, Univeristy of Texas, US
8:30	Impact of Nanoscale Dimensions on Optical Properties (invited presentation) A. Diebold, SUNY Albany, US
9:00	Opening of a tunable bandgap in graphene via oxygen plasma treatment: An building block for graphene-based electronics A. Nourbakhsh, M. Cantoro, A. Klekachev, S. De Gendt, B. Sels, IMEC, BE
9:20	Analysis of Graphene, Molecular Wires and Inorganic Materials for Nanoelectronics and Low Power Integrated Circuits S.E. Lyshevski, Rochester Institute of Technology, US
9:40	Electron Transition Between Weakly Coupled Concentric Quantum Rings I. Filikhin, S.G. Matinyan, J. Nimmo, B. Vlahovic, North Carolina Central University, US
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10:30	Device Design and Simulation 1	Room 205
10:30	Design of Microassembly through Process Modeling in Virtual Reality A.N. Das, H.E. Stephanou, University of Texas at Arlington, US
10:50	Simulation of Field-Plate Effects on Surface-State-Related Lag and Current Slump in GaAs FETs T. Tanaka, K. Itagaki, A. Nakajima, K. Horio, Shibaura Institute of Technology, JP
11:10	Performance Study of Nitride-Based Gunn Diodes G. Aloise, S. Vitanov, V. Palankovski, Advanced Material and Device Analysis Group, AT
11:30	The role of Electromechanical coupling in AlGaN/AlN/GaN HEMTs B. Padmanabhan, D. Vasileska, S.M. Goodnick, Arizona State University, US
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10:30	Nanoelectronics Technologies & Applications 2	Room 207
	Session chair: Bob Doering, Texas Instruments, US
10:30	Phase Transition Oxide Electronics (invited presentation) S. Ramanathan, Harvard University, US
11:00	Graphene Nanoelectronics Beyond Current Technological Limitations (invited presentation)a Simulation Perspective F. Register, D. Basu, X. Mou, D. Reddy, S.K. Banerjee, G. Carpenter, A. Hassabi, A. MacDonald, University of Texas Austin, US
11:30	A Five Input Majority Gate in Quantum-Dot Cellular Automatta R. Akeela, M.D. Wagh, Lehigh University, US
11:50	Artificial Nanostructure Materials for Optical Power Control Devices Y. Ofir, A. Donval, D. Cheskis, T. Fisher and M. Oron, KiloLambda, IL
12:10	Hybrid CMOS/nanodevice circuits with tightly integrated memory and logic functionality D.B. Strukov, University of California at Santa Barbara, US
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1:30	Device Design and Simulation 2	Room 204
1:30	Bottom-up device simulations: modeling electrical currents on the atomic scale A. Blom, K. Stokbro, QuantumWise A/S, DK
1:50	Advanced physics for simulation of ultrascaled devices with UTOXPP Solver D. Garetto, D. Rideau, C. Tavernier, Y. Leblebiciand, A. Schmid, H. Jaouen, IBM corp., FR
2:10	A Negative Index Metamaterial Waveguide for De-Multiplexing X. Vidal, A. Baev, E.P. Furlani, P.N. Prasad, The Institute for Lasers, Photonics and Biophotonics, US
2:30	SUGARX: an Online Tool That Bridges the Gap Between Experiment and Simulation P. Marepalli, F. Li, J.V. Clark, Purdue University, US
2:50	A Regional Model for Threshold Switching in Phase Change Memory L. Wang, Peking University Shenzhen Graduate Schoo, CN
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2:30	TechConnect Ventures: Semiconductors, Sensors & Microsystems	Room 303
	Session chair: Bill Byun, 7Capital, US
2:30	Linear Signal, LLC G. Mockett, Linear Signal, LLC, US
2:40	mc10 G. Callsen, mc10, US
2:50	Nanofab3D Inc. D. Diesk, Nanofab3D Inc., US
3:00	Arkansas Power Electronics International, Inc. T. McNutt, Arkansas Power Electronics International, Inc., US
3:10	nanoLambda B. Choi, nanoLambda, US
3:20	VERSATILIS LLC G. Powch, VERSATILIS LLC, US

Special Symposium

Scaling of semiconductor devices has continued unabated for the past three decades, and will likely continue for the near future. However, at the end of this decade (ca. 2020), the nature of the silicon device is such that many alternative approaches are likely to be viable contenders.

Electronic, photonic and communication device opportunities are emerging, but require coordinated industrial efforts to realize their potential. Already, new materials (SOI, SiGe, strained Si), low-k, high-k dielectrics, and metal gates are used in current production, and III-V compounds and Ge are being developed for he coming generations. In addition, low dimension structures such as Fin-FETS are also being considered.

Yet, the International Technology Roadmap for Semiconductors does not identify logic devices beyond CMOS, which presents a unique opportunity for the research community to influence the future of technology. Consequently, this symposium will address the role of several prospective technologies in creating new device options in the 2020 timeframe (sub-10 nm equivalent technologies). It will provide a forum for the presentation of new designs, processes, devices, architectures, and characterization at the nanoscale. Content will be mindful of the rigors of the existing roadmaps and their associated infrastructure, but will also explore extensions to the roadmap in alignment with industry, SIA and governmental initiatives.

Topics & Application Areas

• Nano Photonics & Devices
• Novel Nanoscale Devices and Applications
• Si Based Nanoscale Devices
• Hybrid Organic/Inorganic Devices
• Quantum Devices, Effects & Spintronics
• Nanoscale Device and Process Modeling
• Nanoscale Electronic Materials Modeling
• Nano Wires & Devices
• Carbon Based Devices
• Optoelectronics
• Novel Memory Materials & Devices
• Interconnect Technologies
• Nanoscale Architectures
• Other

 

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