Nano & Micro: Computational Methods, Simulation & Software Tools
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Symposium Sessions | ||
Tuesday June 14 | ||
| 1:30 | Modeling & Simulation of Nanostructured Materials | |
| 2:40 | Micro & Nano Fluidic Simulation | |
| 4:00 | Italian Trade Commission Reception - Nanotech booth 1607, Cleantech booth 707 | |
| 4:00 | Innovation Showcase & Poster Session - Reception (4:00 - 6:00) | |
| Nano & Micro: Computational Methods, Simulation & Software Tools | ||
Wednesday June 15 | ||
| 8:30 | Workshop on Compact Modeling 1 | |
| 10:30 | Nanomaterials for Catalysis: Theory & Modeling Approaches | |
| 10:30 | Workshop on Compact Modeling 2 | |
| 1:30 | Simulation of Polymer Nanomaterials | |
| 1:30 | Workshop on Compact Modeling 3 | |
| 1:30 | US-China Nanotech Connect | |
| 3:30 | US-China Nanotech Connect - Networking Reception - Booth 930 Expo Hall C (3:30 - 4:00) | |
| 4:00 | Workshop on Compact Modeling 4 | |
| 4:00 | Piemonte Agency For Investments, Export And Tourism Reception - Nanotech booth 1607, Cleantech booth 707 | |
| 4:00 | Innovation Showcase & Poster Session - Reception (4:00 - 6:00) | |
| Nano & Micro: Computational Methods, Simulation & Software Tools | ||
Thursday June 16 | ||
| 8:30 | Workshop on Compact Modeling 5 | |
| 10:30 | Device Design and Simulation 1 | |
| 10:30 | Workshop on Compact Modeling 6 | |
| 1:30 | Device Design and Simulation 2 | |
| 1:30 | Workshop on Compact Modeling 7 | |
| 4:00 | Workshop on Compact Modeling 8 | |
Symposium Program | ||
Tuesday June 14 | ||
| Back to Top | ||
| 1:30 | Modeling & Simulation of Nanostructured Materials | Room 201 |
| Session chair: Simon McGrother, Culgi and Hendrik Heinz, University of Akron | ||
| 1:30 | Engineering property optimization based on atomistic models: myth or reality (invited presentation) G. Goldbeck, Goldbeck Consulting Ltd, UK | |
| 2:00 | Requirements for the industrial computational chemistry of nanoscopic soft materials (invited presentation) S.C. McGrother, S. Nath, J.G.E.M. Fraaije, Culgi USA, US | |
| 2:30 | Understanding Biomolecule-Inorganic Interfaces and Growth of Anisotropic Nanostructures (invited presentation) H. Heinz, K.C. Jha, J. Feng, F.S. Emami, C.C. Perry, S.V. Patwardhan, R.J. Berry, B.L. Farmer, P.A. Mirau, R.R. Naik, University of Akron, US | |
| 3:00 | The Self-Assembly of Nano-Objects code (SANO-Grid) using Grid Interpolation technique: Application to epitaxial organic monolayers adsorbed on metal surfaces T.J. Roussel, L.F. Vega, Consejo Superior de Investigaciones Científicas. (ICMAB-CSIC), ES | |
| 3:20 | Multiferroic StTiO3/BiFeO3 Superlattice:Theory and Experiment A. Roy, A. Garg, R. Prasad, S. Auluck, Indian Institute of Technology Kanpur, IN | |
| 3:40 | Tailoring Molecular Devices for its Electronic Properties V. Lamba, D. Engles, S.K. Pati, Haryana College of Technology & Management, Kaithal, IN | |
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| 2:40 | Micro & Nano Fluidic Simulation | Room 204 |
| Session chair: Daniel Attinger, Columbia University and Edward P. Furlani, University at Buffalo (SUNY) | ||
| 2:40 | Design, Simulation, and Prototyping of an Impulse Turbine for Biomedical Applications H. Cabra, University Of South Florida, US | |
| 3:00 | Modeling Nanoscale Plasmon-assisted Bubble Nucleation and Applications E.P. Furlani, M.T. Swihart, N. Litchinitser, C.N. Delametter, M. Carter, University at Buffalo, US | |
| 3:20 | CFD-Assisted Design and Optimization of a Pharmacokinetic Microfluidic System M. Moeini Sedeh, J.M. Khodadadi, J.W. Hong, K.A. Cramer, M. Hamon, Auburn University, US | |
| 3:40 | Design of Optimized Microfluidic Devices for Viscoelastic Fluid Flow M.A. Alves, Universidade do Porto - Faculdade de Engenharia, PT | |
| 4:00 | Numerical Study on the Mixing Performance of Ring-Type Electroosmotic Micromixer with Configurations of Obstacle in the Mixing Chamber H-S. Seo, J-C. Lee,Y-J. Kim, Sungkyunkwan University, KR | |
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| 4:00 | Italian Trade Commission Reception - Nanotech booth 1607, Cleantech booth 707 | Expo Hall |
| Back to Top | ||
| 4:00 | Innovation Showcase & Poster Session - Reception (4:00 - 6:00) | Expo Hall |
| Back to Top | ||
| Nano & Micro: Computational Methods, Simulation & Software Tools | Expo Hall | |
| - | Smectic structure of Nano Crystalline Cellulose Established by Large-Scale Parallel Molecular Dynamic Simulations Y. Kadiri, D. Simon, G. Picard, Ahuntsic College, CA | |
| - | Dissipative Intrinsic Localized Modes in Nano-ferroelectrics A. Biswas, K. Chowdhury, A.K. Bandyopadhyay, A.K. Bhattacharjee, D. Mandal, Dumkal Institute of Engg. & Technology, IN | |
| - | Calculated Production Yields in Metallofullerene Series Z. Slanina, F. Uhlik, T. Akasaka, S. Nagase, Institute for Molecular Science, JP | |
| - | Carbon Nanotube Field Effect Transistor (CNTFET) 2-D Channel Electrostatic Potential Model for TCAD Application H. Abebe, E. Cumberbatch, USC, US | |
| - | Lumped Modeling of Carbon Nanotubes for M/NEMS Simulation R. Bansal, J.V. Clark, Purdue University, US | |
| - | Application of a Nanoclay-Polypropylene Composite to Efficient Vehicle Occupant Safety Countermeasure Design A. Deb, G.S. Venkatesh, A.G. Karmarkar, B. Gurumoorthy, Indian Institute of Science, IN | |
| - | Simulation-Based Evolutionary Approach to Electrical Characteristic Optimization of Silicon Solar Cells Z-L Lu, National Chiao Tung University, TW | |
| - | Numerical evaluation of growth conditions of GaN-based LEDs in multiwafer MOCVD reactor L. Yang, J. Zhang, J. Hu, Shanghai University, CN | |
Wednesday June 15 | ||
| Back to Top | ||
| 8:30 | Workshop on Compact Modeling 1 | Room 201 |
| Session chair: Xing Zhou, Nanyang Technological University, Singapore | ||
| 8:30 | UF “Compact” Models: A Historical Perspective (invited presentation) J.G. Fossum, University of Florida, US | |
| 9:00 | Complete Surface-Potential Modeling Approach Implemented in the HiSIM Compact Model Family for Any MOSFET Type (invited presentation) M. Miura-Mattausch, M. Miyake, H. Kikuchihara, U. Feldmann, S. Amakawa, H.J. Mattausch, Hiroshima University, JP | |
| 9:30 | Towards a Scalable EKV Compact Model Including Ballistic and Quasi-Ballistic Transport (invited presentation) C.C. Enz, A. Mangla, J.-M. Sallese, EPFL, CH | |
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| 10:30 | Nanomaterials for Catalysis: Theory & Modeling Approaches | Room 207 |
| Session chair: Pankaj Dhingra, CEO, Nanostellar, Inc. | ||
| 10:30 | Multiscale Modeling for Rational Design of Catalyst Nanoparticles (invited presentation) K.J. Cho, The University of Texas at Dallas, US | |
| 11:00 | Fundamental insights into Rh Nanoparticle Sites Responsible for CO Hydrogenation to C1 Hydrocarbons and C2 Oxygenates N. Kapur, X. Hao, C. Sampara, J. Hyun, B. Shan, J.B. Nicholas, B. Davis, K. Cho, Nanostellar Inc, US | |
| 11:20 | Nanostructured TiO2 for Photovoltaic Hydrogen Production M. Patel, Imperial College London, UK | |
| 11:40 | Core-Shell Nanocatalysts for Applications in Fuel Cells and Water Electrolysis J.X. Wang, C. Ma, Y. Zhu, Y. Zhange, R. Si, Y-C. Hsieh, M. Vukmirovic, K. Sasaki, R.R. Adzic, Brookhaven National Laboratory, US | |
| 12:00 | Accurate modelling of intermolecular interactions as predictive tools for the development of high capacity hydrogen and carbon dioxide adsorbents G. Ricchiardi, NIS Centre of Excellence - Università di Torino, IT | |
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| 10:30 | Workshop on Compact Modeling 2 | Room 201 |
| Session chair: Mitiko Miura-Mattausch, Hiroshima University, JP | ||
| 10:30 | Compact Models for sub-22nm MOSFETs (invited presentation) Y.S. Chauhan, D. Lu, S. Venugopalan, T. Morshed, M.A. Karim, A. Niknejad, C. Hu, University of California Berkeley, US | |
| 11:00 | Xsim: An Unified Compact Model for Bulk/SOI/DG/GAA MOSFETs (invited presentation) X. Zhou, Nanyang Technological University, SG | |
| 11:30 | Compact Subthreshold Modeling of Rectangular Gate and Trigate MOSFETs (invited presentation) T.A. Fjeldly, U. Monga, Norwegian University of Technology, NO | |
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| 1:30 | Simulation of Polymer Nanomaterials | Room 205 |
| Session chair: YuanQiao Rao, Dow Chemical Company | ||
| 1:30 | Computational Research for Aerospace Materials Development (invited presentation) B.L. Farmer, Air Force Research Laboratory, US | |
| 2:00 | On the mechanical properties of polymeric nanofibers and their nonwoven membranes (invited presentation) C-L. Pai, M.C. Boyce, G.C. Rutledge, Massachusetts Institute of Technology, US | |
| 2:30 | Multiscale Rheology: New Results for the Kinetic Scale B. Kallemov, G. H. Miller, S. Mitran and D. Trebotich, Lawrence Berkeley National Laboratory, US | |
| 2:50 | Coarse-grain tunable dissipative particle simulation method for entangled polymeric systems M. Yamanoi, O. Pozo, J. Maia, Case Western Reserve University, US | |
| 3:10 | From Games and Films to Molecular Simulation and Design C. Olguin, W. Zhao, Autodesk, Inc., US | |
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| 1:30 | Workshop on Compact Modeling 3 | Room 201 |
| Session chair: Christian Enz, EPFL, CH | ||
| 1:30 | Trends and Challenges in Compact Modeling – a Foundry Supplier’s Perspective (invited presentation) S-W. Lee, Semiconductor Manufacturing Internation (Shanghai) Corp., CN | |
| 2:00 | MOSFET threshold voltage: definition, extraction, and applications (invited presentation) M.B. Machado, O. Siebel, M.C. Schneider, C. Galup-Montoro, Federal University of Santa Catarina, BR | |
| 2:30 | 3D Analytical Modeling of Triple-Gate MOSFET structures (invited presentation) B. Iñiguez, R. Ritzenthaler, F. Lime, Universitat Rovira i Virgili, ES | |
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| 1:30 | US-China Nanotech Connect | Expo Hall Theater |
| 1:30 | Introducing Suzhou Industry Park- a Vibrant and Progressive High-tech Hub in China D. Zhang, Technology and Development Bureau, Suzhou Industrial Park (SIP), CN | |
| 1:45 | Overview of Suzhou Nano-manufacturing Capabilities L. Liu, NanoGlobe, CN | |
| 2:00 | Printed electronics R&D in China and collaboration opportunities Z. Cui, Suzhou Institute of Nanotech and Nanobionics (SINANO), CN | |
| 2:15 | Intradermal Drug Delivery Devices Based on Proprietary Functional Micro Array (FMA) Technology B. Xu, Suzhou Natong Bionanotechnology Ltd. (Nanomed), CN | |
| 2:30 | Experience Sharing: Growing Venture Businesses in China N. An, New England Chinese Information and Networking Association, CN | |
| 2:45 | Technology Partnership and Business Development Opportunities in Nanopolis Suzhou Q&A L. Liu, NanoGlobe, CN | |
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| 3:30 | US-China Nanotech Connect - Networking Reception - Booth 930 Expo Hall C (3:30 - 4:00) | Expo Hall Theater |
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| 4:00 | Workshop on Compact Modeling 4 | Room 201 |
| Session chair: Tor Fjeldly, Norwegian University of Technology, NO | ||
| 4:00 | HiSIM-DG for Extracting Statistical Variations of Measured I-V Characteristics Y. Shintaku, Hiroshima University, JP | |
| 4:20 | Modeling of the impurity-gradient effect in high-voltage MOSFETs Y. Maekawa, K. Fukushima, A. Tanaka, H. Kikuchihara, M. Miyake, H.J. Mattausch, M. Miura-Mattausch, Hiroshima University, JP | |
| 4:40 | Charge Partition in Lateral Nonuniformly-Doped Transistor J. Zhang, X. Zhou, G. Zhu and S. Lin, Nanyang Technological University, SG | |
| 5:00 | Comparison and insight into long-channel MOSFET drain current models L. Zhang, Peking University, CN | |
| 5:20 | Analytic potential model for asymmetricunderlap gate-all-around MOSFET S. Wang, Peking University, CN | |
| Back to Top | ||
| 4:00 | Piemonte Agency For Investments, Export And Tourism Reception - Nanotech booth 1607, Cleantech booth 707 | Expo Hall |
| Back to Top | ||
| 4:00 | Innovation Showcase & Poster Session - Reception (4:00 - 6:00) | Expo Hall |
| Back to Top | ||
| Nano & Micro: Computational Methods, Simulation & Software Tools | Expo Hall | |
| - | Modeling a plane 3 DOF compliant micromanipulator M. Verotti, University of Rome la Sapienza, IT | |
| - | Simplifying the Designing of a MEMS-based Nanoscale Material Testing Device R. Bansal, J.V. Clark, Purdue University, US | |
| - | Nonparabolicity Effects of the Ultra-thin Body Double-gate MOSFETs H. Lou, Peking University, CN | |
| - | An Efficient Iterative Grid Selection Strategy for Time-Mapped Harmonic Balance Method Z. Xu, Peking University, CN | |
| - | High-Fidelity Modeling of Single Molecule Quantum Electronic Devices S.E. Lyshevski, Rochester Institute of Technology, US | |
| - | A Drift-Diffusion Model of Pinned Photodiode Enabling Opto-Electronic Circuit Simulation S. Mei, Peking University Shenzhen Graduate School, CN | |
| - | Compact Modeling of Signal Transients and Integrity Analysis for Dispersionless Interconnect W. Zhao, PKU HKUST Shenzhen Institution of IER., CN | |
| - | Neuromorphic Logic Networks and Robust Stochastic Computing Under Large Perturbations and Uncertanties S.E. Lyshevski, Rochester Institute of Technology, US | |
| - | A Systems Design Framework Based in Matlab That Integrates Sugar, Spice, Simulink, Fea Comsol, and GDS-II Layout P. Marepalli, J.V. Clark, Purdue University, US | |
| - | A Model for Enhanced Chemiluminescence Reactions in Microsystems J. Berthier, P. Joly, F. Rivera, P. Caillat, CEA-LETI, FR | |
| - | An Online Mems Design Tool That Lays Out and Simulates a Parameterized Array from a Reference Device P. Marepalli, J.V. Clark, Purdue University, US | |
Thursday June 16 | ||
| Back to Top | ||
| 8:30 | Workshop on Compact Modeling 5 | Room 201 |
| Session chair: Mansun Chan, HKUST, HK | ||
| 8:30 | Hardware accelerated interconnect capacitance extractor for VLSI design (invited presentation) N. Arora, Silterra Malaysia Sdn. Bhd., US | |
| 9:00 | High-Voltage MOSFET Compact Modeling (invited presentation) E. Seebacher, austriamicrosystems AG, AT | |
| 9:30 | Modeling of High Voltage Devices for ESD Event Simulation (invited presentation) Y. Zhou, J. Salcedo, J.-J. Hajjar, Analog Devices, Inc., US | |
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| 10:30 | Device Design and Simulation 1 | Room 205 |
| 10:30 | Design of Microassembly through Process Modeling in Virtual Reality A.N. Das, H.E. Stephanou, University of Texas at Arlington, US | |
| 10:50 | Simulation of Field-Plate Effects on Surface-State-Related Lag and Current Slump in GaAs FETs T. Tanaka, K. Itagaki, A. Nakajima, K. Horio, Shibaura Institute of Technology, JP | |
| 11:10 | Performance Study of Nitride-Based Gunn Diodes G. Aloise, S. Vitanov, V. Palankovski, Advanced Material and Device Analysis Group, AT | |
| 11:30 | The role of Electromechanical coupling in AlGaN/AlN/GaN HEMTs B. Padmanabhan, D. Vasileska, S.M. Goodnick, Arizona State University, US | |
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| 10:30 | Workshop on Compact Modeling 6 | Room 201 |
| Session chair: Narain Arora, Silterra Malaysia Sdn. Bhd. | ||
| 10:30 | A Phase-Change Random Access Memory Model for Circuit Simulation (invited presentation) M. Chan, HKUST, HK | |
| 11:00 | Modeling Strategies for Flash Memory Devices (invited presentation) A. Padovani, L. Larcher, P. Pavan, Università di Modena e Reggio Emilia, IT | |
| 11:30 | A Universal Memory Model for Design Exploration (invited presentation) C.-C. Wang, Y. Cao, Arizona State University, US | |
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| 1:30 | Device Design and Simulation 2 | Room 204 |
| 1:30 | Bottom-up device simulations: modeling electrical currents on the atomic scale A. Blom, K. Stokbro, QuantumWise A/S, DK | |
| 1:50 | Advanced physics for simulation of ultrascaled devices with UTOXPP Solver D. Garetto, D. Rideau, C. Tavernier, Y. Leblebiciand, A. Schmid, H. Jaouen, IBM corp., FR | |
| 2:10 | A Negative Index Metamaterial Waveguide for De-Multiplexing X. Vidal, A. Baev, E.P. Furlani, P.N. Prasad, The Institute for Lasers, Photonics and Biophotonics, US | |
| 2:30 | SUGARX: an Online Tool That Bridges the Gap Between Experiment and Simulation P. Marepalli, F. Li, J.V. Clark, Purdue University, US | |
| 2:50 | A Regional Model for Threshold Switching in Phase Change Memory L. Wang, Peking University Shenzhen Graduate Schoo, CN | |
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| 1:30 | Workshop on Compact Modeling 7 | Room 201 |
| Session chair: Yu Cao, Arizona State University, US | ||
| 1:30 | Process Variability Modeling for VLSI Circuit Simulation (invited presentation) S.K. Saha, SuVolta, Inc., US | |
| 2:00 | A Fully Anlytical Model for Carbon Nanotube FETs including Quantum Capacitances and Electrostatics (invited presentation) L. Wei, D.J. Frank, L. Chang, H.-S.P. Wong, Massachusetts Institute of Technology, US | |
| 2:30 | Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling H. Abebe, E. Cumberbatch, USC/ISI, US | |
| 2:50 | Hot-Carrier-Induced Current Degradation in Deep Sub-Micron MOSFETs from Subthreshold to Strong Inversion Region L. Shihuan, Nanyang Technology University, SG | |
| 3:10 | Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs M.A. Karim, S. Venugopalan, Y.S. Chauhan, D. Lu, A. Niknejad, C. Hu, University of California at Berkeley, US | |
| 3:30 | Characterization and Modeling of Metal Finger Capacitors N. Lu, R. Booth, D. Daley, E. Thompson, C. Putnam, IBM, US | |
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| 4:00 | Workshop on Compact Modeling 8 | Room 201 |
| Session chair: Samar Saha, Suvolta, Inc. | ||
| 4:00 | Analytical Solutions to Model the Line Edge Roughness and its Effect on Subthreshold Behavior of DG FinFETs U. Monga, T.A. Fjeldly, Norwegian University of Science and Technology, and University Graduate Center (UNIK), NO | |
| 4:20 | Modeling Bias Stress Effect on Threshold Voltage for Amorphous Silicon Thin-Film Transistors C-H Shen, National Chiao Tung University, TW | |
| 4:40 | The accurate Electro-Thermal Model of Merged SiC PiN Schottky Diodes M. Zubert, L. Starzak, G. Jablonski, M. Napieralska, M. Janicki, A. Napieralski, Technical University of Lodz, PL | |
| 5:00 | The Application of RESCUER Software to Modelling of Coupled Problems in Modern Devices M. Zubert, A. Napieralski, Technical University of Lodz, PL | |
Special Symposium
This special symposium is the premier technical forum for presenting the latest research and development in computational methods, tools and applications at the nano and micro scale, along with the latest suite of commercially available tools helping to engineer the next generation of materials, MEMS, microsystems, semiconductors, sensors and pharmaceuticals.
With the continued miniaturization and blending of technologies, advanced computational techniques in the nano and micro regimes are paramount in the advancement of all high technology regardless of its traditional domain.
Following on the 14 year history of the Modeling and Simulation of Microsystems (MSM) Conference, and the International Conference on Computational Nanotechnology (ICCN), herein we present the world’s most comprehensive forum for the micro and nano multidisciplinary design, modeling and simulation community, with presentations and topics for discussion ranging from theoretical developments through fabrication and industry-oriented applications.
Topics & Application Areas
- Molecular Modeling
- Multiscale Modeling
- Nanomaterials design using quantum chemistry
- Novel modeling methods & theory
- Modeling & simulation of polymer nanostructures
- Modeling & simulation nanostructured surfaces
- Finite & Boundary Element Methods
- Process Modeling
- MEMS Device Modeling
- Device & Circuit Simulation
- System & Optimization
- Fluidic Device Simulation
- Other
Journal Submissions
Molecular Simulation
Selected Nanotech Proceedings papers will be reviewed and invited into a Special Issue of Molecular Simulation. The journal covers all aspects of research related to, or of importance to, molecular modelling and simulation (including informatics, theoretical and experimental work).
For consideration into this Special Issue of Molecular Simulations, please select the “Submit to Molecular Simulation” button during the on-line submission procedure.
























