TechConnect World 2019
 

Nanoelectronics

Nanoelectronics

Key Speakers

Sefa DagEffects of Ge Pre-amorphization Implantation (PAI) on Dopant Activity and Contact Resistivity: Ab-Initio Study of Si/Si1-xGex(EPI)/Silicide contacts
Sefa Dag
Principle Research Engineer, Globalfoundries

Cyrus HirjibehedinBistable switching of electric polarization and single-atom magnetic anisotropy for atomically thin binary rock salt structures
Cyrus Hirjibehedin
Technical Staff, MIT, Lincoln Labs

Sameer R SonkusaleFlexible nano-bioelectronics on a thread
Sameer R Sonkusale
Professor, Electrical and Computer Engineering, Tufts University

Jackie KossmannDoubling Down on Semiconductors: Applied Ventures & The Path to Support Start-Ups
Jackie Kossmann
Investor, Applied Materials

 

Symposium Sessions

Monday June 17

10:30Carbon Nano Structures & Devices
1:30Nanoelectronics

Tuesday June 18

8:30Quantum Engineering Materials
10:30Metasurfaces for NextGen Devices
1:302D Materials: Electrical Optical & Thermal Properties
1:30Integrated Optical Devices
2:30Quantum Information Systems & Computation
4:00Nanoelectronics: Posters

Symposium Program

Monday June 17

10:30Carbon Nano Structures & Devices208
Session chair: Wolfgang S. Bacsa, University of Toulouse, FR
10:30Epigraphene: a realistic platform for graphene based nanoelectronics
W. de Heer, Georgia Institute of Technology, US
10:55Carbon nanotubes-Polymer based Flexible Piezoresistive Strain Sensor for Wearable Device Applications
S. Vetrivel, K. Balasubramanian, R. Sundara, Indian Institute of Tehcnology Madras, IN
11:20Annealing (above 2000 °C) and doping treatments of carbon nanotube yarn for high electrical conductivity
Y. Dini, J. Faure-Vincent, J. Dijon, CEA (Commissariat à l'énergie atomique et au énergies alternatives), FR
11:40Controlling growth end-point of horizontally suspended multi-walled carbon nanotubes to achieve end-on contacts for in-situ fabrication of solar devices
J. Iyer, P. Comita, D. Cooke, M. Cheponis, M. McAuliffe, L.H. Cooke, NovaSolix, US
12:00Laser-Carbon Interactions
R.L. Vander Wal, J. Abrahamson, Penn State University, US
12:20Sorption Capacity and Electrical Capacitance of Three-Dimensional Carbon Networks
C. Rojas, N. Santacruz, V. Dorvilien, F. Mendoza, S. Michea, G. Morell, B.R. Weiner, University of Puerto Rico, US
1:30Nanoelectronics208
Session chair: Cyrus Hirjibehedin, Lincoln Labs; Marina Leite, University of Maryland, US
1:30Doubling Down on Semiconductors: Applied Ventures & The Path to Support Start-Ups
J. Kossmann, Applied Materials
1:55Bistable switching of electric polarization and single-atom magnetic anisotropy using atomically thin binary rock salt structures
C.F. Hirjibehedin, MIT Lincoln Laboratory, US
2:20Flexible nano-bioelectronics on a thread
S. Sonkusale, Tufts University, US
2:45Effects of Ge Pre-amorphization Implantation (PAI) on Dopant Activity and Contact Resistivity: Ab-Initio Study of Si/Si1-xGex(EPI)/Silicide contacts
S. Dag, Gobalfoundries, US
3:10Transient nanophotonics with earth-abundant materials
M. Leite, University of Maryland, US
3:35Utilization of the Flexible Josephson Toroidal Junctions for Self- Powering 150K Super lattice Bits Having Non-volatile Memory Storage in One Device Assembly at Room Temperature
E.T. Chen, J.T. Thornton, S-H. Duh, P.T. Kissinger, Advanced Biomimetic Sensors, Inc., US

Tuesday June 18

8:30Quantum Engineering Materials313
Session chair: William L. Wilson, Harvard University, US
8:30The Center for Integrated Quantum Materials
R.M. Westervelt, Harvard University, Center for Integrated Quantum Materials, US
9:00Quantum Engineering Materials and Devices in Cambridge
W. Wilson, Harvard University, US
9:30Harvard Quantum Initiative
E. Hu, Harvard University
10:30Metasurfaces for NextGen Devices313
Session chair: William L. Wilson, Harvard University, US
10:30Synthesis and Integration of Two Dimensional Materials
J. Kong, Massachusetts Institute of Technology, US
11:00Two dimensional materials for tunable quantum electronic and optical devices
L. Ju, Massachusetts Institute of Technology
11:30Metasurface-enabled broadband achromatic optics
W-T. Chen, F. Capasso, Harvard University, US
12:00Optical metasurfaces: From fundamental science to application
R. Devlin, Metalenz, US
1:302D Materials: Electrical Optical & Thermal Properties309
Session chair: Irma Kuljanishvili, Saint Louis University, US
1:30Probing heat flow in large graphene bubbles with a single laser beam
W. Bacsa, University of Toulouse, FR
1:55Spin-orbit splitting and electron-induced luminescence at vacancies and substitutional defects in monolayer WS2
B. Schuler, K. Cochrane, J.-H. Lee, C. Kastl, S. Refaely-Abramson, D. Qiu, S. Barja, C. Chen, N. Borys, F. Ogletree, S. Aloni, A. Schwartzberg, S. Louie, J. Neaton, and A. Weber-Bargioni, Lawrence Berkeley National Laboratory, US
2:15Tunable as-grown graphene contacts to semiconducting transition metal dichalcogenides
S. Subramanian, K. Xu, S. Moser, D. Deng, N.A. Simonson, D. Waters, J. Li, R.M. Feenstra, S.K. Fullerton-Shirey, J.A. Robinson, The Pennsylvania State University, US
1:30Integrated Optical Devices313
Session chair: Bob Westervelt, Harvard University, US
1:30Quantum Photonics with Diamond
M. Loncar, Harvard University, US
2:00Thin-film lithium niobate for next generation integrated photonic circuits - when performance meets scalability
M. Zhang, HyperLight, US
2:30Quantum Information Systems & Computation313
Session chair: Bob Westervelt, Harvard University, US
2:30Introduction to Quantum Computing
W. Oliver, MIT Lincoln Lab, US
2:55Enabling Technology for Beyond Intermediate Scale Quantum Computing Systems
T.A. Ohki, Raytheon BBN Technologies, US
3:20Two-dimensional quantum materials for quantum technology
K.C. Fong, Raytheon BBN Technologies, US
4:00Nanoelectronics: PostersHall C
Comprehensive Analysis of High Performing Electrochemical Biosensors and Their Applications: II, System Update
S.W. Leung, J.C.K. Lai, Idaho State University, US
Design of Ternary logic XOR gate using novel quantum dot gate non-volatile memory (QDNVM)
S. Karmakar, Farmingdale State College-State University of New York, US
Improved Electric Field Decomposition Capacitance Model with 3-D Terminal and Fringe Components in Sub-28nm Interconnect
A. Zhang, C. Li, Y. He, J. Liu, X. He, G. Ma, J. Pan, J. He, G. Hu, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
Surface Potential Based Compact I-V Model for GaN HEMT Devices
C. Chang, J. He, C. Li, Y. He, J. Liu, X. He, J. Pan, G. Hu, Y. Ren, SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
Graphene Based Field Effect Transistor Analog/RF Performance Analysis from Non-equilibrium Green’s Function Simulation
Yu. Chen, J. He, C. Li, X. He, P. Jun, G. Hu, J. Liu, Y. Ren, X. Ma, SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
Numerical Method to Simulate GFET Terahertz Wave Detection
X. Ma, J. He, C. Li, X. He, P. Jun, G. Hu, Y. Ren, X. Wang, SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
First principle study of Germanium and Selenium doped monolayer black phosphorus
C.S. Tejaswi Issarapu, R.C. Junghare, G.C. Patil, Visvesvaraya National Institute of Technology Nagpur, IN
R3-PowerUP – the Driver for key European BCD Technologies Development focused on Smart Power and Power Discretes ICs
G. Janczyk, T. Bieniek, Institute of Electron Technology, PL
The “first and euRopEAn siC eigTh Inches pilOt line” REACTION project as a Driver for key European SiC Technologies focused on Power Electronics Development
T. Bieniek, G. Janczyk, A. Sitnik, A. Messina, Instytut Technologii Elektronowej, PL
Ab-initio tight binding Hamiltonian generation for 1D and 2D MoS2 based Devices
R.C. Junghare, G.C. Patil, Visvesvaraya National Institute of Technology Nagpur, IN
Effect of Strain on Electronic Transport in Silicene Nanoribbon using Tight Binding Model
A. Shukla, R.C. Junghare, G.C. Patil, Visvesvaraya National Institute of Technology Nagpur, IN
Resonance Tunneling in Concentric Quantum Rings
J. Nimmo, North Carolina Central University, US
Effects of Buried Channel Array Transistor (BCAT) Fin Profiles on Leakage and Refresh Characteristics of DRAM Devices
S. Yang, S. Jung, S. Park, D. Kim, H. Ban, D. Song, B. Choi, Samsung Electronics Co. / Sungkyunkwan University, KR
The Effects of Channel Poly Grain Size on Cell Reliability of 3D-NAND Flash Memory
E. Youm, S. Sunil-Shim, M. Park, Y. Shin, E. Youm, B.D. Choi, Samsung Electronics / Sungkyunkwan University, KR
Low-temperature solution processable inorganic vanadium oxide hole injection layer for flexible QLEDs
S.J. Kang, Kyung Hee University, KR
 

Approaches based on nanoscale materials, engineering, and technology are changing the very nature of electronics and the essence of how electronic devices are manufactured.

The 12th annual Nanoelectronics Symposium will highlight novel materials, fabrication processes, devices, designs, and architectures: revealing and inspiring the future of electronics. Please join innovators from industry, academia, and government laboratories from around the world at this keynote event.

View the Special Session organized by Harvard Center for Nanoscale Systems on Quantum Materials and Devices.

2019 Sponsors & Partners
 

SBIR/STTR Agency Partners:

SBIR/STTR Agency Partners