Ultralow Spin-on Dielectrics (k < 2.0) with Superb Mechanical properties as Interlayer Dielectrics for the Next Generation System LSI
Sogang University Research Foundation, Seoul, Korea
Our ultralow spin-on dielectrics (k=1.94) show excellent mechanical properties (E=7.2GPa) which are closely relative to sizes (r<2nm) and uniform distribution of pores. These remarkable results are obtained by the specially designated reactive porogens. The reactive porogens can prevent pore aggregation due to their reactivity with organosilicates during sol-gel reaction.
Primary Application Area: Electronics, Sensors & Communications
Technology Development Status: Prototype
Technology Readiness Level: TRL 5
FIGURES OF MERIT
Value Proposition: We used chemically reactive porogens and controlled the size and distribution of nanopores. Therefore, we succeed to control the mechanical properties even at high porosities, which can withstand CMP processing. ITRS 2013 indicates this ULK material will be expected to be applicable to 8 nm node in 2027.
Organization Type: Academic/Gov Lab
Showcase Booth #: 525
GOVT/EXTERNAL FUNDING SOURCES
Government Funding/Support to Date: Global Frontier R&D program on Center for Multiscale Energy System funded by the National Research Foundation under the Ministry of Education, Science and Technology, Korea
Primary Sources of Funding: Federal Grant
Looking for: Both Funding and Development Partners