Controlling Surface-directed Nanoepitaxy using Low-dose Ion Beam Pulses

E. Garratt, B. Nikoobakht
National Institute of Standards and Technology,
United States

Keywords: surface-directed growth, VLS, epitaxy, 2D materials, scalable, semiconductor


A key step in advancing the integration of nanostructures in a scalable fashion into 2D and 3D device architectures is understanding the response of nanocrystals to external stimuli. In the context of control of nanostructure formation, previous research has demonstrated the ability to scalably restrict surface-directed nanoepitaxy and partition the electronic structure and crystal orientation of single nanosystems using low dose ion beam pulses. The threshold of failure for nanoepitaxy on an irregular surface depends on the density of latticed matched areas, constituting at least 20% of the surface, between irregular patches. We present here an evaluation of the electro-optical properties of single and ensemble lateral nanowires whose assembly has been manipulated using this technique. This approach is expected to impact epitaxy of highly mismatched semiconductors and lead to a realization of ultrathin heterojunctions of 1D and 2D materials.