The Simulator of Electromagnetic Phenomena inside 3-D Silicon Structures

M. Zubert, M. Jankowski, T. Raszkowski, A. Samson, A. Napieralski
Lodz University of Technology,

Keywords: electromagnetic compatibility, modeling and analysis of semiconductor structures, 3D IC


The modeling and simulation of electromagnetic phenomena can be useful in modern Integrated Semiconductor Circuits including 3D Integrated Circuits are regarded the further development of electronics called More-Than-Moore, as-well-as the modern CPU containing FinFETs. This is an important issue, because of the direction of development of new semiconductor technologies. The distance between devices constantly decreases, while ever higher operating frequencies are utilized. In 3D integrated systems all bulk wafers are exposed one to another at distances as small as tens of μm, which makes them even more vulnerable to electromagnetic disturbances. Moreover, infra-chip and inter-chip systems of wireless communication arise, which are especially promising for more efficient design of 3D systems. Also, development of 3D integrated systems is a revolutionary step, which introduces a third dimension to the generally planar semiconductor structures. Unfortunately, this also introduces new level of design complication. Facing such changes, it is not possible to properly design advanced integrated 2D and 3D systems, unless following problems are addressed and solutions developed: • modified design methodology; • simulation tools that allow simulations of the electronic system, simultaneously taking into account electromagnetic phenomena, for example: with SPICE simulator coupled to the electromagnetic simulator dedicated to 2D and 3D integrated circuits; • design rule-sets for 2D and 3D IC system design validation and error-tracking, similar to those currently used by the DRC and ERC tools used nowadays. The authors will propose an effective modeling and simulation method for effective simulations of electromagnetic phenomena inside integrated circuit structures. The elaborated models should have higher precision then existing Integrated Circuit Emission Model and Integrated Circuit Immunity Model models. Due to higher efficiency in comparison to existing solutions, the research outcome should enable fast and precise EM simulations of complete functional blocks of IC taking into account its electrical design and layout geometry. Finite Element Time Domain method with Faedo-Galerkin approximation for equation formulation [1-3] as well as a high order Whitney Elements Time Domain method [4] and Weighted Essentially Non-Oscillatory method [5] will be applied in this purpose. The system complexity will be reduced using separate kernel splitting methods [7]. REFERENCES [1] Jin-Fa Lee Time-domain finite-element methods. IEEE Transactions on Antennas and Propagation. Vol. 45 , Issue: 3, pp. 430 – 442, Mar 1997 [2] Kantartzis, N. A Combined Stencil-Adjustable Time-Domain/FETD Method for Electrically-Large EMC Structures. 20th International Zurich Symposium on Electromagnetic Compatibility, Jan 2009, pp. 93-96 [3] Qing He, Houle Gan, Dan Jiao. An Explicit Time-Domain Finite-Element Method That Is Unconditionally Stable. Purdue University. Electrical and Computer Engineering Technical Reports, 2011. [4] George W. Pan.: "Wavelets in Electromagnetics and Device Modeling", Wiley Series in Microwave and Optical Engineering Kai Chang Series Ed. Wiley-interscience. A John Wiley and Sons 2003. [5] Chi-Wang Shu. Essentially non-oscillatory and weighted essentially non-oscillatory s chemes for hyperbolic conservation laws. Technical Report. Institute for Computer Applications in Science and Engineering (ICASE) 1997. [7] Robert D. Skeel. Fast N-Body Methods: Why, What, and Which. ICNAAM 2010: AIP Conference Proceedings, Vol 1281, pp. 27-30 (2010).