The innovation is a new device that combines zero conduction loss of a superconducting switch and fast operation of a semiconducting device. It also enables high off-resistance and fast operation. It addresses a gap in technology for reliable fast power switching in the current AC and future DC grid.
Primary Application Area: Energy, Efficiency
Technology Development Status: Prototype
FIGURES OF MERIT
Value Proposition: This invention combines appealing features of a semiconducting switch with zero conduction resistance of a superconductor. An IGBT switch operating at 300 KV, 1000 A would dissipate approximately 0.5 MW of power, while this device offers over 2 order of magnitude reduction in losses.
Organization Type: Academic/Gov Lab
Showcase Booth #: 32M / 32T
GOVT/EXTERNAL FUNDING SOURCES
Vetted Programs/Awards: Recipient of 2015 R&D 100 Award.