Ferroelectric Mid-IR Integrated Photonics Using Epitaxial Barium Titanate Thin Films

P.T. Lin
Texas A&M University,
United States

Keywords: integrated photonics, mid-infrared, ferroelectrics


Mid- photonic circuits that integrate silicon waveguides and epitaxial barium titanate (BTO) thin films are demonstrated using the complementary metal–oxide–semiconductor (CMOS) process. A broad infrared transmittance between λ = 2.5 µm to λ = 7 um is observed. Our waveguides show a sharp fundamental mode over broad mid-IR spectrum while its optical field distribution between the a-Si and the BTO layers can be modified by varying the height of the a-Si ridge. Our monolithic Si on ferroelectric BTO platform will enable tunable mid-IR microphotonics that is desired for high-speed optical logic gates.