X. He, J. Pan, J. Liu, C. Li, G. Hu, G. Ma, J. He, M. Chan
SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution,
Keywords: tunneling double-gate MOSFET, effective mobility, modeling and simulation
Summary:We have derived an analytical model for the effective field (Eeff) model of undoped Ultra-Thin Body (UTB) Double Gate (DG) SOI Tunneling MOSFETs ( T-FinFET) from the solution of the Poisson’s equation in this paper . The Eeff is directly linked to the carrier mobility in the strong inversion and can be used to predict the bias dependence of the effective mobility (eff). Extensive simulations show that the Eeff model is not influenced by the quantum effect besides which indicates that its influence is limited to the constant zero-field mobility (o) and independent of bias. The model predicts that for the same amount of inversion charge, a symmetric DG (SDG) MOSFET has higher eff than UTB or asymmetric DG (ADG) MOSFET especially at high gate bias or strong turn-on.