Multi-Current-Peak Negative Differential Resistance Device using Two-Dimensional Materials

K-H Kim, J-H Park
Sungkyunkwan University,

Keywords: tunneling device, negative differential resistance, multi-valued logic


Tunneling devices based on negative differential resistance (NDR) property have extensively studied to overcome conventional binary CMOS system[1]. In particular, the multi-current-peak characteristics (three or more threshold voltages) of the tunneling devices offer a basis to construct multi-valued logic (MVL) circuits that reduce their complexity by lowering the number of devices and interconnect lines. For example, two- and three-current-peak devices can be used to implement ternary and quaternary logic inverter circuits, respectively. Recently, two dimensional (2D) materials, which have pristine surface characteristics, have opened new opportunity to implement MVL tunneling devices and circuits without lattice mismatch problem[2]. However, only few researches have been reported regarding multi-current-peak devices for future MVL system. Here, we report a three-current-peak tunneling device based on the type-III heterojunctions consisting of black phosphorus (BP), rhenium disulfide (ReS2), and hafnium disulfide (HfS2). Peak to valley current ratio (PVCR) values of the current peaks were close to about two at room temperature. Furthermore, we first demonstrated the feasibility of multi-peak tunneling device toward a ternary SRAM circuit, where the circuit operated at ultra-low standby power dissipation (