Enabling Mask Free fabrication of 2D Architectures on Different Substrates via Aqueous Inks Precursors and CVD Synthesis

I. Kuljanishvili, D. Alameri, D. Karbach, R. Dong, L. Moore
Saint Louis University,
United States

Keywords: 2D heterostructures, mask free patterning, CVD systhesis


1 Saint Louis University, Department of Physics *Corresponding author/ presenter email: irma.kuljanishvili@slu.edu Low dimensional materials such as 2D graphene and boron nitride or other layered van der Waals semiconductor atomic crystals, WS2 or MoS2, and 1D nanowires (NWs) and nanoribbons such as ZnO, and other semiconducting materials, have drawn significant attention in the past decade due to their nanoscale unique physical, chemical, optical properties as well as mechanical strength or flexibility. These low dimensional materials when assembled in vertical or lateral arrangements often lead to the largely enhanced properties, and new functionalities. While the preparation of layered architectures in desired shapes and specific locations usually involves multi-step fabrication processes, it also relies predominately on mask-assisted lithographic processes. Here we present a mask-free controlled selective preparation of 1D and 2D nanostructures of MoS2, WS2 and ZnO nano- and micro-ribbons on graphene and other substrates in the variety of geometric assemblies by employing parallel direct write patterning (DWP) of aqueous ink precursors on substrates and devices at predefined locations. In a two-step process (1st patterning and 2nd growth) our unconventional fabrication approach enables simple and flexible production of hetero-structures and other architectures based on “mix and match” principle in precisely controlled fashion. Location specific synthesis of materials also provides access to as-grown interfaces and rapid testing of materials quality, crystallinity and chemical composition which can be easily confirmed by several non-destructive surface probe tools or optical and electronic characterization methods (Raman Spectroscopy, PL, AFM, etc). Our ‘bottom-up’ approach offers simple and flexible route to rapid testing of prototype nano-architectures and platforms, via multiplexing and the ease of probing device interfaces their viability and robustness and the potential for further development of specific targeted applications. Corresponding author/and presenter email: irma.kuljanishvili@slu.edu Acknowledgement: Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02 06CH11357, and Saint Louis University seed fund. References: 1. R. Dong, L. Moore, N. Aripova, C. Williamson, R. Schurz, Y. Liu, L. E. Ocola, and *I. Kuljanishvili, “Bottom-up Approach to a Mask Free Selective Growth of WS2/MoS2 Heterostructure Systems,” RSC Advances, 6, 66589–66594, (2016) , also see R. Dong, L. Moore, L. E. Ocola and *I. Kuljanishvili, Adv. Mater. Interfaces, 3, 1600098, (2016), 2. R. Dong and *I. Kuljanishvili, “Progress in Fabrication of transition metal dichalcogenites heterostructures systems”, J.Vac. Sci. Technol. B, 35(3), pp. 030803 (2017) 3. D. Alameri, L. Ocola and *I. Kuljanishvili, “Mask-free fabrication and chemical vapor deposition synthesis of ultra-thin zinc oxide microribbons on Si/SiO2 and 2D substrates” J. Vac. Sci. Technol. A, Vol. 35, Issue 5, 2018 (DOI: 10.1116/1.5036533)