Yu. Chen, J. He, C. Li, X. He, P. Jun, G. Hu, J. Liu, Y. Ren, X. Ma
SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution,
Keywords: graphene field effect transistor (GFET), Analog/RF performance, Green function simulation, energy band
Summary:Based on the non-equilibrium Green’s function simulation, the Graphene Field Effect Transistor (GFET) analog/RF performance including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details. The analysis method is described and the GFET analog/RF performance dependence on the operation bias, device parameter, and gate oxide thickness are demonstrated. These results will be useful for the device scientists and circuit engineers to optimize the GFET structure and improve its circuit performance for the potential analog/RF application in near future.