X. Ma, J. He, C. Li, X. He, P. Jun, G. Hu, Y. Ren, X. Wang
SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution,
China
Keywords: graphene field effect transistor (GFET), THZ performance, numerical method, device physics, modeling and simulation
Summary:
A numerical method to simulate THz wave generation and detection of the graphene base field effect transistor (GFET) is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulations have been discussed in detail and some have also been compared with the existing theories, proving the validity of the developed numerical method.