Tunable as-grown graphene contacts to semiconducting transition metal dichalcogenides

S. Subramanian, K. Xu, S. Moser, D. Deng, N.A. Simonson, D. Waters, J. Li, R.M. Feenstra, S.K. Fullerton-Shirey, J.A. Robinson
The Pennsylvania State University,
United States

Keywords: two-dimensional materials, heterostructures, graphene, MoS2, contacts


Heterogenous combinations of two-dimensional (2D) layered materials provides us with an ability to tune several electronic and optical properties tailored for specific applications. Transition metal dichalcogenides (TMDs) are attractive 2D materials in the “beyond graphene” realm of materials. To utilize their unique electronic properties, it is important to develop low resistance contacts to these materials. Graphene is a promising candidate and has been shown to produce low-resistance contacts to a few TMDs. But this has been done by manual stacking via exfoliation or polymer-assisted transfer, which is not a scalable method. One avenue that is still in its infancy, yet could provide significant potential for scalability and be enroute “all-2D” electronics is the realization of as-grown graphene contacts to 2D materials beyond graphene. Here, I discuss electronic properties resulting from the interface of the as-grown lateral heterostructures between epitaxial graphene and TMDs.