TECHNOLOGY SUMMARY

This nano-patterned GaN/InGaN quantum well metasurface exhibits high unidirectional photoluminescence and can be used for the development of compact light-emitting diodes (LEDs) with highly directional emission. This invention redirects light in a unidirectional manner by using independently excited incoherent spontaneous emission from InGaN quantum wells from within each GaN resonator. It ensures highly polarized and unidirectional emission, which breaks the inherent symmetry of the nanostructure. This invention may be a breakthrough in the development of LEDs with its unique advantage that allows for efficient implementation in display and lighting devices. Currently, there exists technology to efficiently collect and collimate the light coming out of the LEDs; however, it is diffused and requires external bulk optical components. This technology solves the current limitations through its enhanced efficiency and compactness.

AREA/MATURITY/AWARDS

Primary Application Area: Electronics, Sensors, Communications

Technology Development Status: Prototype

Technology Readiness Level: TRL 2

SHOWCASE SUMMARY

Organization Type: Academic/Gov Lab

Showcase Booth #: 211

Website: https://tia.ucsb.edu/

GOVT/EXTERNAL FUNDING SOURCES