Grooved Bottom electrode Based Molecular Spintronics Device

P. Tyagi
University of the District of Columbia,
United States

Keywords: molecular spintronics devices, magnetic tunel junction, single molecule magnet, TMR, GMR, quantum computers


Mass fabrication of molecular spintronics devices (MSDs) can harness the untapped exotic properties of variable spin state molecules for making the next generation of computers, including quantum computers. However, since the conceptualization of molecular devices in the early 1970 to date no device fabrication approach has provided answers to major critical device fabrication challenges. The most critical challenge is the lack of a commercially viable device fabrication approach. A successful MSD fabrication approach must be easily configurable to allow the utilization of various types of molecules and magnetic electrodes to foster the development of a wide range of molecular spintronics devices. Inventor, Pawan Tyagi, have been researching in the area of tunnel junction-based molecular devices for 18 years and has established tunnel junction-based molecular spintronics device route as a potential solution. However, the past approach has a number of limitations (1) the physical spacer thickness between two metal electrodes must be smaller than the target molecule length, (2) Roughness of the bottom electrode lead to inferior quality insulator, (c) deposition of the insulator along the vertical edges is difficult to cover uniformly, etc. The inventor has come up with a new MSD device fabrication method to address these challenges. We patented the method of utilizing robust and mass-producible grooved bottom electrode enabled magnetic tunnel junction based molecular spintronics device as P. Tyagi, "Trenched Bottom Electrode and Liftoff based Molecular Devices. U.S. Patent Application No. 16/102,732.," 2020.