Tunable Bipolar Single Electron-Pair Transistor

M. Shur
Rensselaer Polytechnic Institute,
United States

Keywords: single-photon emission, quantum communication, quantum key, bipolar single electron-hole pair transistor


Single Electron Transistor (SET) technology has reached the sophistication with SET operating at room temperature. Dimensions down to 1 nm have been demonstrated for SETs, and SETs, just like nanodots, and nanowires could be used for single-photon detection. SETs could be coupled to optical fibers. This paper deals with the Bipolar Single electron-hole pair Transistors (BSTs) and quantum communication systems using SETs, BSTs, and their arrays. A BST uses two side gates that could be biased separately and has opposite polarity source and drain contacts. This device enables the injection of single electron-hole pair into an artificial tunable quantum dot created by changing the channel topology from a quantum plane to a quantum wire, and the n to a quantum dot. This localization is achieved by using the energy barriers created by the drain-to-source and gate-to-source voltages. The BST having three independent bias voltages allows for independent control of the localization of the electron-hole pair (for the single-photon emission), emission rate, and the photon frequency. This allows for controlled room-temperature single-photon emission and enables voltage modulation of emission rate and frequency making efficient room temperature Si SET to Si BST fiber communication systems possible. Materials systems suitable for the implementation of BSTs include Si, III-V, III-N, p-diamond, and graphene.