R. Joseph Kline

Project Leader

National Institute of Standards and Technology

My research involves developing methods for X-ray metrology for complex 3D nanostructures for the semiconductor industry. I also develop methods for using soft and hard x-ray scattering to characterize the pattern shape and local chemistry in next generation lithographies such as directed-self assembly of block copolymers and extreme ultraviolet lithography. A method developed by our group called critical dimension small angle X-ray scattering (CDSAXS) was recently transferred to the semiconductor industry and is being used in memory fabs for characterizing high aspect ratio memory structures such as 3D-NAND. I am currently the project leader of the Metrology for Nanolithography project.