The CLAWS Research Foundry: III-Nitride Wide-Bandgap RF and Power Electronics

P. Wellenius
CLAWS Hub - NC State University,
United States

Summary:

Unique material characteristics of wide-bandgap III- Nitride semiconductor materials, including gallium nitride, aluminum nitride and their alloys, enable the high-performance RF and Power electronic devices displacing silicon devices in critical dual-use applications. Due to the relative immaturity of these technologies, qualified supply chains and fabrication capabilities remain difficult to access without substantial investment. The CLAWS hub is accelerating innovation in this space by establishing a domestic research foundry, offering qualified epitaxy, wafer fabrication, packaging, test, and design capabilities with greater flexibility than what is offered by conventional semiconductor foundries. An overview of capabilities being established at the CLAWS hub in support of these RF and Power electronics technologies will be presented.