J. Li
IDTechEx,
United Kingdom
Keywords: GaN, electric vehicles, power electronics, inverter, semiconductor, efficiency, sustainability, net-zero
Summary:
The automotive power electronics market is seeing a monumental shift towards SiC MOSFETs from incumbent Si technologies, which can handle the high voltages and switching required with much greater efficiency. However, amid this transition, GaN technologies are maturing to a level such that they are becoming a viable solution for different power electronics components, such as the traction inverter and onboard charger. Suppliers such as Infineon and ROHM have released GaN power devices and modules, with the potential to be used in electric vehicles in the near future. GaN devices are being used in high-voltage automotive applications in China starting in 2026, while developments in substrate, transistor design, and system engineering push GaN closer to its material potential as a wide-bandgap semiconductor. Traditional GaN-on-Si technologies are both a blessing and a curse, allowing for cost-effective manufacture leveraging existing Si technology, while also limiting their high-voltage and high-current operation. This is one of the many considerations when deploying GaN for electric vehicles. Drawing on IDTechEx’s latest research and market modeling, this presentation explores the technical and commercial readiness of GaN across the automotive power electronics supply chain. The key advantages, remaining challenges, R&D breakthroughs, and supply chain information shaping GaN’s adoption trajectory through 2036 will be assessed. This presentation will cover: • The current market landscape for EV power electronics and GaN - How does it compare with Si and SiC for the inverter, onboard charger, and DC-DC converter? • The value proposition of GaN in terms of efficiency, power density, and cost • Obstacles to mass market adoption - What further advances will we need to see? • Recent commercial developments with GaN in EV power electronics • Future outlook for power semiconductors, the market position of GaN, Si, and SiC, and other potential developments