R.O.K. Ozdemir, D. Young, C. Ybanez
framergy, Inc.,
United States
Keywords: nanostructured oxides, 3D heterogeneous integration, dielectric layers, thermal interfaces, diffusion barriers, functional interlayers, structural templates
Summary:
Metal–organic frameworks (MOFs) have emerged as versatile precursors for nanostructured oxides, offering precise control over morphology, porosity, and composition. Among these, gallium-based MOFs such as framergy’s AYRSORB™ G100 (MIL-100(Ga) or Ga–BTC) represent promising templates for producing high-purity gallium oxide (Ga₂O₃), a wide-bandgap semiconductor with excellent chemical and thermal stability. When derived via controlled calcination, MOF-based Ga₂O₃ exhibits tunable crystallinity and microstructure, enabling multifunctional roles within 3D Heterogeneous Integration (3DHI) architectures. This abstract outlines five principal use functions where AYRSORB™ MOF-derived Ga₂O₃ can advance 3DHI materials engineering—serving as dielectric layers, thermal interfaces, diffusion barriers, functional interlayers, and structural templates. First, as dielectric and insulating layers, MOF-derived Ga₂O₃ films can be engineered with tailored density and defect levels to achieve optimized dielectric constants and high breakdown voltages. Their conformal coating behavior enables uniform insulation between stacked chips, improving signal isolation and reducing leakage in densely integrated systems. The ability to fine-tune porosity during pyrolysis provides a balance between mechanical compliance and dielectric performance—critical for 3D interlayer applications. Second, as thermal interface and heat-spreading layers, Ga₂O₃ obtained from MOF precursors can exhibit hierarchical porosity, allowing for anisotropic heat transport across 3D stacks. These materials can be further modified by infiltration with metallic or carbonaceous fillers (e.g., Cu, graphene) to enhance thermal conductivity while maintaining electrical isolation. Such hybrid structures serve as adaptive thermal management media that mitigate localized heating, a major limitation in vertically stacked chip architectures. Third, as barrier and passivation layers, dense Ga₂O₃ films formed by post-calcination densification act as robust diffusion barriers against metal migration (Cu, Au) and moisture penetration. The chemical inertness and high-temperature stability of Ga₂O₃ make it particularly suitable for back-end-of-line (BEOL) and wafer bonding interfaces in heterogeneous packaging. Additionally, its amorphous nature at moderate annealing temperatures enables defect-free adhesion without inducing thermal stress on neighboring layers. Fourth, as semiconducting or functional interlayers, doped MOF-derived Ga₂O₃ can be utilized for embedded power devices, sensors, or photonic layers within 3DHI structures. By incorporating dopants such as tin, zinc, or indium during MOF synthesis, electrical conductivity and bandgap can be modulated to create tunable functional zones. This opens the possibility for integrated wide-bandgap electronics directly within 3D logic or memory stacks, expanding system-level capabilities. Finally, as structural and templating frameworks, MOF-derived Ga₂O₃ retains partial memory of its precursor’s ordered porosity, enabling the fabrication of nanostructured scaffolds, microchannels, or porous bonding layers. These architectures can be leveraged for advanced interconnect formation, embedded microfluidic cooling, or sacrificial layer processing, thereby contributing to 3D microfabrication flexibility. Collectively, MOF-derived Ga₂O₃ provides a multifunctional materials platform bridging electronic, thermal, and structural domains in 3DHI. Its chemical tunability and microstructural precision suggest strong potential for integration into next-generation chiplet, power, and optoelectronic systems—offering both performance enhancement and fabrication adaptability within advanced semiconductor packaging. AYRSORB™ MOFs are exclusively licensed to framergy (through CNRS, Professor Serre and Texas A&M University, Professor Zhou). framergy is the exclusive licensor to the global granted patent families of US8940392B2 US9724668B2 and US10065979B2.