C.-Y. Nam
Brookhaven National Laboratory,
United States
Keywords: atomic layer deposition, dielectric, 2D materials, van der Waals surface, nucleation
Summary:
Atomic layer deposition (ALD) offers unparalleled control over film thickness and composition, yet its application to two-dimensional (2D) van der Waals (vdW) materials remains challenging due to their chemically inert, dangling-bond–free surfaces. These characteristics hinder the nucleation of dielectric films, resulting in nonuniform or discontinuous growth that limits the performance and reliability of 2D electronic devices. In this talk, I will present an overview of the fundamental challenges in achieving conformal dielectric coatings on 2D vdW materials and review various strategies reported to promote ALD nucleation, including surface functionalization, seeding layers, and plasma-assisted processes. I will then introduce our recent approach that employs inhibitor molecules—traditionally used in area-selective ALD—to enable uniform, ultrathin metal oxide dielectric deposition on 2D surfaces. This new strategy offers a scalable and surface-preserving pathway toward high-quality dielectric integration for next-generation 2D device applications.