Nanoelectronics

Key Speakers

Effects of Ge Pre-amorphization Implantation (PAI) on Dopant Activity and Contact Resistivity: Ab-Initio Study of Si/Si1-xGex(EPI)/Silicide contacts
Sefa Dag
Principle Research Engineer, Globalfoundries

Bistable switching of electric polarization and single-atom magnetic anisotropy for atomically thin binary rock salt structures
Cyrus Hirjibehedin
Technical Staff, MIT, Lincoln Labs

Flexible nano-bioelectronics on a thread
Sameer R Sonkusale
Professor, Electrical and Computer Engineering, Tufts University

Doubling Down on Semiconductors: Applied Ventures & The Path to Support Start-Ups
Jackie Kossmann
Investor, Applied Materials

Symposium Sessions
	Monday June 17
10:30	Carbon Nano Structures & Devices
1:30	Nanoelectronics
	Tuesday June 18
8:30	Quantum Engineering Materials
10:30	Metasurfaces for NextGen Devices
1:30	2D Materials: Electrical Optical & Thermal Properties
1:30	Integrated Optical Devices
2:30	Quantum Information Systems & Computation
4:00	Nanoelectronics: Posters

Symposium Program
	Monday June 17

10:30	Carbon Nano Structures & Devices	208
	Session chair: Wolfgang S. Bacsa, University of Toulouse, FR
10:30	Epigraphene: a realistic platform for graphene based nanoelectronics W. de Heer, Georgia Institute of Technology, US
10:55	Carbon nanotubes-Polymer based Flexible Piezoresistive Strain Sensor for Wearable Device Applications S. Vetrivel, K. Balasubramanian, R. Sundara, Indian Institute of Tehcnology Madras, IN
11:20	Annealing (above 2000 °C) and doping treatments of carbon nanotube yarn for high electrical conductivity Y. Dini, J. Faure-Vincent, J. Dijon, CEA (Commissariat à l'énergie atomique et au énergies alternatives), FR
11:40	Controlling growth end-point of horizontally suspended multi-walled carbon nanotubes to achieve end-on contacts for in-situ fabrication of solar devices J. Iyer, P. Comita, D. Cooke, M. Cheponis, M. McAuliffe, L.H. Cooke, NovaSolix, US
12:00	Laser-Carbon Interactions R.L. Vander Wal, J. Abrahamson, Penn State University, US
12:20	Sorption Capacity and Electrical Capacitance of Three-Dimensional Carbon Networks C. Rojas, N. Santacruz, V. Dorvilien, F. Mendoza, S. Michea, G. Morell, B.R. Weiner, University of Puerto Rico, US

1:30	Nanoelectronics	208
	Session chair: Cyrus Hirjibehedin, Lincoln Labs; Marina Leite, University of Maryland, US
1:30	Doubling Down on Semiconductors: Applied Ventures & The Path to Support Start-Ups J. Kossmann, Applied Materials
1:55	Bistable switching of electric polarization and single-atom magnetic anisotropy using atomically thin binary rock salt structures C.F. Hirjibehedin, MIT Lincoln Laboratory, US
2:20	Flexible nano-bioelectronics on a thread S. Sonkusale, Tufts University, US
2:45	Effects of Ge Pre-amorphization Implantation (PAI) on Dopant Activity and Contact Resistivity: Ab-Initio Study of Si/Si1-xGex(EPI)/Silicide contacts S. Dag, Gobalfoundries, US
3:10	Transient nanophotonics with earth-abundant materials M. Leite, University of Maryland, US
3:35	Utilization of the Flexible Josephson Toroidal Junctions for Self- Powering 150K Super lattice Bits Having Non-volatile Memory Storage in One Device Assembly at Room Temperature E.T. Chen, J.T. Thornton, S-H. Duh, P.T. Kissinger, Advanced Biomimetic Sensors, Inc., US
	Tuesday June 18

8:30	Quantum Engineering Materials	313
	Session chair: William L. Wilson, Harvard University, US
8:30	The Center for Integrated Quantum Materials R.M. Westervelt, Harvard University, Center for Integrated Quantum Materials, US
9:00	Quantum Engineering Materials and Devices in Cambridge W. Wilson, Harvard University, US
9:30	Harvard Quantum Initiative E. Hu, Harvard University

10:30	Metasurfaces for NextGen Devices	313
	Session chair: William L. Wilson, Harvard University, US
10:30	Synthesis and Integration of Two Dimensional Materials J. Kong, Massachusetts Institute of Technology, US
11:00	Two dimensional materials for tunable quantum electronic and optical devices L. Ju, Massachusetts Institute of Technology
11:30	Metasurface-enabled broadband achromatic optics W-T. Chen, F. Capasso, Harvard University, US
12:00	Optical metasurfaces: From fundamental science to application R. Devlin, Metalenz, US

1:30	2D Materials: Electrical Optical & Thermal Properties	309
	Session chair: Irma Kuljanishvili, Saint Louis University, US
1:30	Probing heat flow in large graphene bubbles with a single laser beam W. Bacsa, University of Toulouse, FR
1:55	Spin-orbit splitting and electron-induced luminescence at vacancies and substitutional defects in monolayer WS2 B. Schuler, K. Cochrane, J.-H. Lee, C. Kastl, S. Refaely-Abramson, D. Qiu, S. Barja, C. Chen, N. Borys, F. Ogletree, S. Aloni, A. Schwartzberg, S. Louie, J. Neaton, and A. Weber-Bargioni, Lawrence Berkeley National Laboratory, US
2:15	Tunable as-grown graphene contacts to semiconducting transition metal dichalcogenides S. Subramanian, K. Xu, S. Moser, D. Deng, N.A. Simonson, D. Waters, J. Li, R.M. Feenstra, S.K. Fullerton-Shirey, J.A. Robinson, The Pennsylvania State University, US

1:30	Integrated Optical Devices	313
	Session chair: Bob Westervelt, Harvard University, US
1:30	Quantum Photonics with Diamond M. Loncar, Harvard University, US
2:00	Thin-film lithium niobate for next generation integrated photonic circuits - when performance meets scalability M. Zhang, HyperLight, US

2:30	Quantum Information Systems & Computation	313
	Session chair: Bob Westervelt, Harvard University, US
2:30	Introduction to Quantum Computing W. Oliver, MIT Lincoln Lab, US
2:55	Enabling Technology for Beyond Intermediate Scale Quantum Computing Systems T.A. Ohki, Raytheon BBN Technologies, US
3:20	Two-dimensional quantum materials for quantum technology K.C. Fong, Raytheon BBN Technologies, US

4:00	Nanoelectronics: Posters	Hall C
	Comprehensive Analysis of High Performing Electrochemical Biosensors and Their Applications: II, System Update S.W. Leung, J.C.K. Lai, Idaho State University, US
	Design of Ternary logic XOR gate using novel quantum dot gate non-volatile memory (QDNVM) S. Karmakar, Farmingdale State College-State University of New York, US
	Improved Electric Field Decomposition Capacitance Model with 3-D Terminal and Fringe Components in Sub-28nm Interconnect A. Zhang, C. Li, Y. He, J. Liu, X. He, G. Ma, J. Pan, J. He, G. Hu, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
	Surface Potential Based Compact I-V Model for GaN HEMT Devices C. Chang, J. He, C. Li, Y. He, J. Liu, X. He, J. Pan, G. Hu, Y. Ren, SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
	Graphene Based Field Effect Transistor Analog/RF Performance Analysis from Non-equilibrium Green’s Function Simulation Yu. Chen, J. He, C. Li, X. He, P. Jun, G. Hu, J. Liu, Y. Ren, X. Ma, SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
	Numerical Method to Simulate GFET Terahertz Wave Detection X. Ma, J. He, C. Li, X. He, P. Jun, G. Hu, Y. Ren, X. Wang, SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
	First principle study of Germanium and Selenium doped monolayer black phosphorus C.S. Tejaswi Issarapu, R.C. Junghare, G.C. Patil, Visvesvaraya National Institute of Technology Nagpur, IN
	R3-PowerUP – the Driver for key European BCD Technologies Development focused on Smart Power and Power Discretes ICs G. Janczyk, T. Bieniek, Institute of Electron Technology, PL
	The “first and euRopEAn siC eigTh Inches pilOt line” REACTION project as a Driver for key European SiC Technologies focused on Power Electronics Development T. Bieniek, G. Janczyk, A. Sitnik, A. Messina, Instytut Technologii Elektronowej, PL
	Ab-initio tight binding Hamiltonian generation for 1D and 2D MoS2 based Devices R.C. Junghare, G.C. Patil, Visvesvaraya National Institute of Technology Nagpur, IN
	Effect of Strain on Electronic Transport in Silicene Nanoribbon using Tight Binding Model A. Shukla, R.C. Junghare, G.C. Patil, Visvesvaraya National Institute of Technology Nagpur, IN
	Resonance Tunneling in Concentric Quantum Rings J. Nimmo, North Carolina Central University, US
	Effects of Buried Channel Array Transistor (BCAT) Fin Profiles on Leakage and Refresh Characteristics of DRAM Devices S. Yang, S. Jung, S. Park, D. Kim, H. Ban, D. Song, B. Choi, Samsung Electronics Co. / Sungkyunkwan University, KR
	The Effects of Channel Poly Grain Size on Cell Reliability of 3D-NAND Flash Memory E. Youm, S. Sunil-Shim, M. Park, Y. Shin, E. Youm, B.D. Choi, Samsung Electronics / Sungkyunkwan University, KR
	Low-temperature solution processable inorganic vanadium oxide hole injection layer for flexible QLEDs S.J. Kang, Kyung Hee University, KR

Approaches based on nanoscale materials, engineering, and technology are changing the very nature of electronics and the essence of how electronic devices are manufactured.

The 12th annual Nanoelectronics Symposium will highlight novel materials, fabrication processes, devices, designs, and architectures: revealing and inspiring the future of electronics. Please join innovators from industry, academia, and government laboratories from around the world at this keynote event.

View the Special Session organized by Harvard Center for Nanoscale Systems on Quantum Materials and Devices.