TechConnect World 2019
Co-Located with Nanotech 2019 SBIR/STTR Spring AI TechConnect
Nanotech 2019
 

Nanoelectronics

Nanoelectronics

Submit Abstract - due May 10 »

Key Speakers

Sefa DagEffects of Ge Pre-amorphization Implantation (PAI) on Dopant Activity and Contact Resistivity: Ab-Initio Study of Si/Si1-xGex(EPI)/Silicide contacts
Sefa Dag
Principle Research Engineer, Globalfoundries

Cyrus HirjibehedinBistable switching of electric polarization and single-atom magnetic anisotropy for atomically thin binary rock salt structures
Cyrus Hirjibehedin
Technical Staff, MIT, Lincoln Labs

Sameer R SonkusaleFlexible nano-bioelectronics on a thread
Sameer R Sonkusale
Professor, Electrical and Computer Engineering, Tufts University

Jianshi TangHigh-Performance Carbon Nanotubes Electronics: Progress and Prospect
Jianshi Tang
Research Staff Member, IBM T. J. Watson Research Center

 

Symposium Sessions

Monday June 17

10:30Carbon Nanostructure Electronics & Devices
1:30Nanoelectronics

Tuesday June 18

8:30Quantum Engineering Materials
10:30Metasurfaces
1:302D Materials: Electrical Optical & Thermal Properties
1:30Integrated Optical Devices
2:30Quantum Information
4:00Nanoelectronics: Posters

Symposium Program

Monday June 17

10:30Carbon Nanostructure Electronics & Devices
Epigraphene: a realistic platform for graphene based nanoelectronics
W. de Heer, Georgia Institute of Technology, US
Gap States Controlled Transmission Through 1D Metal-Nanotube Junction
U.N. Nandi, Scottish Church College, IN
Improvement of the exciton dissociation efficiency in hybrid polymer nanocomposite based OPV devices by the incorporation of carbon nanomaterials
B. Aïssa, A. Ali, MPB Technologies Inc., CA
Annealing (above 2000 °C) and doping treatments of carbon nanotube yarn for high electrical conductivity
Y. Dini, J. Faure-Vincent, J. Dijon, CEA (Commissariat à l'énergie atomique et au énergies alternatives), FR
UV Photo-response characterization of GO/Si based device
C. Bonavolontà, C. Aramo, C. Granata, A. Vettoliere, B. Ruggiero, P. Silvestrini, P. Ferraro, M. Ambrosio, M. Valentino, INFN, Sezione di Napoli, IT
1:30Nanoelectronics
R. Mehta, Applied Materials
Bistable switching of electric polarization and single-atom magnetic anisotropy using atomically thin binary rock salt structures
C.F. Hirjibehedin, MIT Lincoln Laboratory, US
Flexible nano-bioelectronics on a thread
S. Sonkusale, Tufts University, US
Effects of Ge Pre-amorphization Implantation (PAI) on Dopant Activity and Contact Resistivity: Ab-Initio Study of Si/Si1-xGex(EPI)/Silicide contacts
S. Dag, Gobalfoundries, US
Transient nanophotonics with earth-abundant materials
M. Leite, University of Maryland, US
Utilization of the Flexible Josephson Toroidal Junctions for Self- Powering 150K Super lattice Bits Having Non-volatile Memory Storage in One Device Assembly at Room Temperature
E.T. Chen, J.T. Thornton, S-H. Duh, P.T. Kissinger, Advanced Biomimetic Sensors, Inc., US
10,000V AND 5,000V QUASI-LATERAL DIAMOND POWER SWITCHING FILED EFFECT TRANSISTORS
I. Ponomarev, J. Butler, T.P. Chow, Euclid TechLabs, LLC, US

Tuesday June 18

8:30Quantum Engineering Materials
The Center for Integrated Quantum Materials
R.M. Westervelt, Harvard University, Center for Integrated Quantum Materials, US
Quantum Engineering Materials and Devices in Cambridge
W. Wilson, Harvard University, US
Harvard Quantum Initiative
E. Hu, Harvard University
J. Kong, Massachusetts Institute of Technology, US
Two dimensional materials for tunable quantum electronic and optical devices
L. Ju, Massachusetts Institute of Technology
10:30Metasurfaces
Metasurface-enabled broadband achromatic optics
W-T. Chen, F. Capasso, Harvard University, US
R. Devlin, Metalenz, US
1:302D Materials: Electrical Optical & Thermal Properties
Probing heat flow in large graphene bubbles with a single laser beam
W. Bacsa, University of Toulouse, FR
Twist Angle Dependent Thermal Conductivity of supported Twisted Bilayer Graphene by Raman Spectroscopy
G. Luis-Matos, A. Limbu, T. Perez, W. Weiner, B. Morell, University of Puerto Rico Rio Piedras, US
Exploring the Electronic and Optoelectronic Properties of New Emerging 2D Materials and Devices
M.R. Amer, King Abdulaziz City for Science and Technology and University of California Los Angeles, US
Enhanced Thermal Boundary Conductance in Atomically Thin Ti3C2Tz MXene
Z. Hemmat, A. Salehi-Khojin, University of Illinois at Chicago, US
Spin-orbit splitting and electron-induced luminescence at vacancies and substitutional defects in monolayer WS2
B. Schuler, K. Cochrane, J.-H. Lee, C. Kastl, S. Refaely-Abramson, D. Qiu, S. Barja, C. Chen, N. Borys, F. Ogletree, S. Aloni, A. Schwartzberg, S. Louie, J. Neaton, and A. Weber-Bargioni, Lawrence Berkeley National Laboratory, US
Tunable as-grown graphene contacts to semiconducting transition metal dichalcogenides
S. Subramanian, K. Xu, S. Moser, D. Deng, N.A. Simonson, D. Waters, J. Li, R.M. Feenstra, S.K. Fullerton-Shirey, J.A. Robinson, The Pennsylvania State University, US
1:30Integrated Optical Devices
Quantum Photonics with Diamond
M. Loncar, Harvard University, US
Thin-film lithium niobate for next generation integrated photonic circuits - when performance meets scalability
M. Zhang, HyperLight, US
2:30Quantum Information
D. Rosenberg, MIT Lincoln Lab, US
Enabling Technology for Beyond Intermediate Scale Quantum Computing Systems
T.A. Ohki, Raytheon BBN Technologies, US
K.C. Fong, Raytheon BBN Technologies, US
4:00Nanoelectronics: Posters
Multiferroic properties of Bi0.95Tb0.05FeO3 nanoparticles
G. Dhir, P. Uniyal, N.K. Verma, Public College, Samana, IN
Comprehensive Analysis of High Performing Electrochemical Biosensors and Their Applications: II, System Update
S.W. Leung, J.C.K. Lai, Idaho State University, US
A Nanogap Device for Electrical Characterisation of Nanometre Scale Molecular Components
E. Ore, University of Cambridge, UK
Design of Ternary logic XOR gate using novel quantum dot gate non-volatile memory (QDNVM)
S. Karmakar, Farmingdale State College-State University of New York, US
oved Electric Field Decomposition Capacitance Model with 3-D Terminal and Fringe Components in Sub-28nm Interconnect
A. Zhang, C. Li, Y. He, J. Liu, X. He, G. Ma, J. Pan, J. He, G. Hu, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
Surface Potential Based Compact I-V Model for GaN HEMT Devices
C. Chang, J. He, C. Li, Y. He, J. Liu, X. He, J. Pan, G. Hu, Y. Ren, SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
Graphene Based Field Effect Transistor Analog/RF Performance Analysis from Non-equilibrium Green’s Function Simulation
Yu. Chen, J. He, C. Li, X. He, P. Jun, G. Hu, J. Liu, Y. Ren, X. Ma, SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
Numerical Method to Simulate GFET Terahertz Wave Detection
X. Ma, J. He, C. Li, X. He, P. Jun, G. Hu, Y. Ren, X. Wang, SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
First principle study of Germanium and Selenium doped monolayer black phosphorus
C.S. Tejaswi Issarapu, R.C. Junghare, G.C. Patil, Visvesvaraya National Institute of Technology Nagpur, IN
R3-PowerUP – the Driver for key European BCD Technologies Development focused on Smart Power and Power Discretes ICs
G. Janczyk, T. Bieniek, Institute of Electron Technology, PL
The “first and euRopEAn siC eigTh Inches pilOt line” REACTION project as a Driver for key European SiC Technologies focused on Power Electronics Development
T. Bieniek, G. Janczyk, A. Sitnik, A. Messina, Instytut Technologii Elektronowej, PL
Ab-initio tight binding Hamiltonian generation for 1D and 2D MoS2 based Devices
R.C. Junghare, G.C. Patil, Visvesvaraya National Institute of Technology Nagpur, IN
Effect of Strain on Electronic Transport in Silicene Nanoribbon using Tight Binding Model
A. Shukla, R.C. Junghare, G.C. Patil, Visvesvaraya National Institute of Technology Nagpur, IN
Resonance Tunneling in Concentric Quantum Rings
J. Nimmo, North Carolina Central University, US
Effects of Buried Channel Array Transistor (BCAT) Fin Profiles on Leakage and Refresh Characteristics of DRAM Devices
S. Yang, S. Jung, S. Park, D. Kim, H. Ban, D. Song, B. Choi, Samsung Electronics Co. / Sungkyunkwan University, KR
The Effects of Channel Poly Grain Size on Cell Reliability of 3D-NAND Flash Memory
E. Youm, S. Sunil-Shim, M. Park, Y. Shin, E. Youm, B.D. Choi, Samsung Electronics / Sungkyunkwan University, KR
Low-temperature solution processable inorganic vanadium oxide hole injection layer for flexible QLEDs
S.J. Kang, Kyung Hee University, KR
 

Approaches based on nanoscale materials, engineering, and technology are changing the very nature of electronics and the essence of how electronic devices are manufactured.

The 12th annual Nanoelectronics Symposium will highlight novel materials, fabrication processes, devices, designs, and architectures: revealing and inspiring the future of electronics. Please join innovators from industry, academia, and government laboratories from around the world at this keynote event.

View the Special Session organized by Harvard Center for Nanoscale Systems on Quantum Materials and Devices.

Submit Your Abstract

Please first review the information for authors — abstract submission guidelines.

 

Topics & Application Areas

  • High Performance Transistors
  • Memory Devices
  • Quantum Materials & Devices
  • Nanoelectronic Logic Materials
  • Carbon Based Electronics: Graphene, Carbon Nanotubes
  • Devices & Interconnects
  • Interaction of Quantum Materials
  • Novel Nanoelectonic Materials
  • Quantum Computing
  • Other
 
2019 Sponsors & Partners
2019 Sponsors & Partners